Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-todrain cap...

Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs

This paper presents a physical explanation of MOSFET intrinsic gate to drain capacitance (CGD) going negative due to Drain Induced Barrier Lowering (DIBL) effect. For the sub-90nm MOS devices, DIBL effect may be dominant enough to guide CGD to negative if de-embedded from parallel extrinsic overlap, outer and inner fringing capacitances. The possibility of this phenomenon is evident from the re...

Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs

Study the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs

A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface of silicon nanowire metal-oxide-semiconductor field effect transistors (NW-MOSFETs). Those SAMs-modified silicon NW-MOSFETs were used to discr...